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IMZC120R026M2H

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IMZC120R026M2H

Name: IMZC120R026M2H
Brand: Infineon Technologies
Price: 1 USD

Brand Name : Infineon Technologies

Model Number : IMZC120R026M2H

Manufacturer : Infineon Technologies

Description : Wider max. VGS range from -10 V to +25 V

Supplier Device Package : PG-TO247-4

Benefits : Higher power density

Ciss : 1990 pF

Coss : 85 pF

ID (@ T_C=25°C) max : 69 A

Ptot (@ T_A=25°C) max : 289 W

Pin Count : 4 Pins

Polarity : N

QG : 60 nC

Qgd : 16 nC

Qualification : Industrial

RDS (on) (@ Tj = 25°C) : 25 mΩ

RthJA max : 62 K/W

RthJC max : 0.52 K/W

Technology : CoolSiC™ G2

VDS max : 1200 V

Moisture Level : NA

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IMZC120R026M2H-DataSheet

The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Typical Applications

- General-purpose drives (GPD). - Electric Vehicle (EV) charging.
- Online Uninterruptible Power Supplies (UPS). - Solar power optimizers.
- String inverters. - Energy Storage Systems (ESS).
- Welding equipment.

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